The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2002
Filed:
Aug. 31, 2000
Applicant:
Inventors:
Wilfried Von Ammon, Hochburg/Ach, AT;
Herbert Weidner, Haiming, DE;
Dirk Zemke, Marktl, DE;
Christoph Frey, Burghausen, DE;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G30B 1/504 ;
U.S. Cl.
CPC ...
G30B 1/504 ;
Abstract
A process for producing nitrogen-doped semiconductor wafers has the nitrogen being derived from a dopant gas which contains NH . The process includes pulling a single crystal from a melt of molten semiconductor material, feeding the dopant gas to the semiconductor material, and cutting the nitrogen-doped semiconductor wafers off the pulled single crystal. The dopant gas is fed to the semiconductor material at most until pulling begins for that part of the single crystal from which the semiconductor wafers are cut.