The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2002

Filed:

Jan. 30, 2001
Applicant:
Inventors:

Louis L. Hsu, Fishkill, NY (US);

Richard M. Parent, Shelburne, VT (US);

Li-Kong Wang, Montvale, NJ (US);

Matthew R. Wordeman, Makawao, HI (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 ;
U.S. Cl.
CPC ...
G11C 7/02 ;
Abstract

A complete solution to block noise from eDRAM macro to the analog core, and vice verse, in a system-on-chip IC design. Specifically, there is provided a first isolated triple well structure formed in the IC for reducing noise component resulting from operative elements of a DC generator circuit fabricated therein; and, a second isolated triple well structure formed in the IC for reducing noise component resulting from operative elements of a noise sense amplifier bank and DRAM arrays fabricated therein. A power supply source is provided for supplying power to each DC generator circuit, noise sense amplifier bank and DRAM array; as is a power bus for providing power and a separate power bus for providing a ground to each of the DC generator circuit, and the noise sense amplifier circuit and DRAM array components. In this manner, noise contamination with noise sensitive devices in said IC is reduced and, further noise contamination of the DRAM array as sourced from the IC is reduced.


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