The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2002
Filed:
Jul. 17, 2000
Paul T. Bennett, Phoenix, AZ (US);
Randall C. Gray, Tempe, AZ (US);
Michael Garrett Neaves, Phoenix, AZ (US);
Joseph V. DeNicholas, Phoenix, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A high-side, low-side driver that controls voltage from a voltage source to an inductive or resistive load includes a power transistor with a gate, a source and a drain. The driver is configured in a high-side configuration when the load is connected between the source and ground and the drain is connected to the voltage source and in a low-side configuration when the load is connected between the drain and the voltage source and the source is connected to ground. A gate drive circuit turns the power transistor on and off. The positive clamp circuit is connected to the drain and the voltage source. The positive clamp circuit provides a recirculation path for inductive energy that is stored in the inductive load when a loss of reverse battery condition occurs or when ground is lost. A negative clamp circuit that is connected to the source and ground provides a recirculation path for inductive energy that is stored in the inductive load when a loss of reverse battery condition occurs and when battery voltage is lost in the high-side configuration. The power transistor is preferably an isolated lateral double-diffused metal oxide semiconductor field effect transistor (ILDMOSFET). A current limit circuit includes lateral NPN transistors. Multiple drivers may be integrated into a single chip for controlling voltage to multiple inductive loads.