The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2002
Filed:
Dec. 02, 1999
Horizontal mos gate type semiconductor device including zener diode and manufacturing method thereof
Chong-Man Yun, Seoul, KR;
Fairchild Korea Semiconductor, Ltd., Kyungki-do, KR;
Abstract
A lateral MOS gate semiconductor device including Zener diodes has a structure in which the Zener diodes are integrated within the device. The Zener diodes are connected in parallel to a parasitic diode within the device, between drain and source terminals, and have a relatively low breakdown voltage. Accordingly, when a large reverse voltage is applied due to an avalanche energy generated by an inductive load upon turning off the device, breakdown occurs in the Zener diodes before the internal parasitic diode, thus allowing reverse current to flow from the drain terminal to the source terminal through the Zener diodes. As described above, the reverse current flows through the Zener diodes, rather than through the parasitic diode, so that a parasitic bipolar junction transistor is prevented from being turned on. Therefore, the device can endure a high avalanche energy.