The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2002
Filed:
Aug. 18, 2000
Nobuaki Teraguchi, Kusatsu, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
Each layer of a three-layer structure composed of semiconductor (collector layer )/metal (base layer )/semiconductor (emitter layer ) is formed from a nitride. By so doing, one identical constituent element (N) is contained in both semiconductor layers and the metal layer. Because Nb of the NbN base layer combines with N to form a nitride at a stoichiometric ratio of 1:1, the resulting metal nitride and nitride semiconductor exhibit the same stoichiometric ratio. Therefore, it becomes possible to form the base layer and the emitter layer spatially continuously (interface bonding of 1:1), so that a successful Schottky junction can be obtained. As a result, an MBT superior in electrical characteristics can be obtained. Thus, the semiconductor device has successful Schottky characteristics so that superior characteristics can be obtained.