The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2002
Filed:
Apr. 16, 2001
Applicant:
Inventor:
David Christopher Gilmer, Austin, TX (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/13205 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/13205 ;
Abstract
A hafnium-based dielectric layer, such as hafnium oxide (HfO ), is formed over a semiconductor substrate by flowing a hafnium-containing precursor of hafnium (Hf) and iodine (I) and an oxygen-containing precursor resulting in a high quality dielectric layer over the substrate. In one embodiment, the hafnium-containing precursor is Hafnium tetraiodide (HfI ). The two precursors may be applied simultaneously or alternately. The hafnium tetraiodide may be provided into a reaction chamber via sublimation or direct liquid injection.