The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2002
Filed:
Jun. 19, 2000
Applicant:
Inventor:
Hirotaka Kawata, Suwa, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/10232 ; H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ;
U.S. Cl.
CPC ...
H01L 3/10232 ; H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ;
Abstract
The potential at a channel region of a MOSFET on a substrate needs to be stabilized to assure a drain withstand voltage. To this end, a new potential line is additionally required. However, the addition of the potential line causes a drop in the aperture ratio in a transmissive type liquid-crystal display device, in which lightness is particularly important. A light shielding layer overlapping the MOSFET formed on the substrate is electrically connected to the channel region in the MOSFET.