The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2002
Filed:
Aug. 31, 2000
Fairchild Korea Semiconductor, Ltd., Buchon, KR;
Abstract
A power semiconductor device having an improved high breakdown voltage and improved productivity, and a fabrication method thereof are provided. The power semiconductor includes a collector region of a first conductivity type formed in a semiconductor substrate, a base region of second conductivity type formed in the collector region, and an emitter region of the first conductivity type formed in the base region. A channel stop region is formed being spaced a predetermined distance from the base region. An insulative film, a semi-insulating polycrystalline silicon (SIPOS) film, and a nitride film patterned respectively to expose the emitter region, the base region, and the channel stop region are sequentially deposited on the semiconductor substrate. A base electrode, an emitter electrode, and an equipotential electrode connected respectively to the base region, the emitter region, and the channel stop region are formed.