The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2002
Filed:
Sep. 04, 1998
Chandrasekaram Ramiah, Phoenix, AZ (US);
Jeffrey L. Young, Los Gatos, CA (US);
Neil L. Pagel, Prescott, AZ (US);
Other;
Abstract
A method and apparatus for improving film stability and moisture resistance of a borophosphosilicate film. The BPSG film according to the present invention is formed under plasma conditions in which high and low frequency RF power is employed to generate the plasma. The high frequency power supply provides most of the energy to break the molecules in the process gas thereby forming the plasma and promoting the necessary reactions. The low frequency power supply regulates and controls ion bombardment of the BPSG film as it is formed. In a preferred embodiment, nitrogen is included in the process gas and the low frequency RF power supply is used to precisely control ion bombardment during deposition processing thereby allowing incorporation of an unexpectedly elevated amount of nitrogen into the film further improving film stability.