The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2002
Filed:
Mar. 20, 2000
Kouhei Morizuka, Kanagawa-ken, JP;
Yasuhiko Kuriyama, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor device is provided having a high-frequency amplifying bipolar transistor ( ) with its emitter electrode grounded. A current mirror circuit including a bipolar transistor ( ) supplies the transistor ( ) with a base potential as bias voltages for operating as a Class B or Class AB amplifier. A thermal linkage is established between the transistor ( ) and the transistor ( ) to reduce a difference between their junction temperatures. A metallic layer ( ) is provided as a means for establishing the thermal linkage. The transistor ( ) is provided between fingers ( A) and ( B) of the transistor ( ) as another means for establishing the thermal linkage. A distance between the transistor ( ) and one of the fingers ( A) and ( B) of the transistor ( ) is made smaller than the thickness of a semiconductor substrate ( ) on which the transistors are formed as other means for establishing the thermal linkage.