The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2002
Filed:
Mar. 24, 2000
Chong-man Yun, Seoul, KR;
Tae-hoon Kim, Kyungki-do, KR;
Ho-cheol Jang, Seoul, KR;
Young-chull Choi, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A power semiconductor device having low on-resistance and a high breakdown voltage is disclosed. The power semiconductor device can be a high power MOS transistor or an insulation gate bipolar transistor. The power semiconductor device has unit cells formed in parallel body region strips. A highly-doped drift layer of the same conductivity type as that of a drift region is provided between adjacent body region strips in a unit cell. Both ends of each of the body region strips of the unit cell are connected to a single frame region. This prevents a depletion region of a spherical or cylindrical type from being formed on an edge of the body region, and in so doing, increases a breakdown voltage of the device.