Silicon carbide cmos devices

Abstract

A monollithic CMOS integrated device formed in silicon carbide and method of fabricating same. The CMOS integrated device includes a layer of silicon carbide of a first conductivity type with a well region of a second conductivity type formed in the layer of silicon carbide. A MOS field effect transistor is formed in the well region and a complementary MOS field effect transistor is formed in the silicon carbide layer. The method of fabrication of CMOS silicon carbide includes formation of an opposite conductivity well region in a silicon carbide layer by ion implantation. Source and drain contacts are also formed by selective ion implantation in the silicon carbide layer and the well region. A gate dielectric layer is formed by deposition and reoxidation. A gate electrode is formed on the gate dielectric such that a channel region is formed between the source and the drain when a bias is applied to the gate electrode. Source drain and body contacts are preferably formed of the same material in a single fabrication step.