The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2002
Filed:
Mar. 31, 2000
Akie Yutani, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Referring to a capacitor having a capacitor dielectric film made of a high dielectric film, it is possible to obtain a method of manufacturing a semiconductor device capable of forming a fine storage node made of a noble metal. A polysilicon film is formed over a whole face of an interlayer insulating film ( ), and is then subjected to anisotropic dry etching by using, as a mask, a resist having a predetermined opening pattern. Consequently, a polysilicon film ( ) is formed in contact with a plug layer ( ). Next, a noble metal element is substituted for a silicon element contained in the polysilicon film ( ). Thus, it is possible to form a storage node ( ) which has at least a surface made of the noble metal element and has the same three-dimensional configuration as the polysilicon film ( ) obtained before the substitution.