The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2002
Filed:
Sep. 12, 2000
Chang-Jae Lee, Chungcheongbuk-do, KR;
Nae-Hak Park, Seoul, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungki-Do, KR;
Abstract
A semiconductor device includes a semiconductor substrate having an active area including first and second impurity regions of a transistor, a gate formed over the active area of the semiconductor substrate and isolated from the semiconductor substrate, a first insulating interlayer formed on the semiconductor substrate and having first and second contact holes exposing the first and the second impurity regions, respectively, a capacitor having a storage electrode and a plate electrode, the storage electrode being connected electrically to the first impurity region through the first contact hole, a bit line contact pad connected electrically to the second impurity region through the second contact hole, a second insulating interlayer formed on the plate electrode and having a third contact hole exposing the bit line contact pad, and a bit line formed on the second insulating interlayer and in contact with the bit line contact pad through the third contact hole.