The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2002
Filed:
May. 18, 2001
Chihiro Arai, Kanagawa, JP;
Hiroyuki Miwa, Tokyo, JP;
Sony Corporation, , JP;
Abstract
A method of production of a semiconductor device able to be miniaturized by preventing the decline of the h at a low current caused by an increase of a surface recombination current of a bipolar transistor and forming the external base region by self-alignment with respect to emitter polycrystalline silicon in the BiCMOS process. An intrinsic base region of a first semiconductor element is formed, an insulating film having an opening at an emitter formation region of part of the intrinsic base region is formed, and then an emitter electrode of the first semiconductor element and a protective film are formed on an insulating film having the opening. Next, a sidewall insulating film is left on the gate electrode side portion. Simultaneously, the insulating film is removed while partially leaving the emitter region forming-use insulating film under the emitter electrode. Further, the external base region connected to the intrinsic base region is formed on the semiconductor substrate surface by self-alignment with respect to the emitter electrode.