The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2002
Filed:
Jun. 15, 2001
Byung Chul Ahn, Kyungsangbook-do, KR;
Hyung Sik Seo, Kyunggi-do, KR;
Hoe Sup Soh, Kyunggi-do, KR;
Chang Dong Kim, Seoul, KR;
Jae Beom Choi, Daejeon-shi, KR;
Duk Chul Yun, Seoul, KR;
LG. Philips LCD Co., Ltd., Seoul, KR;
Abstract
A semiconductor device includes a substrate and a first layer of a first conductive material on the substrate, the first layer having a first etching rate. A second layer of a second conductive material has a first hole on a portion of the first layer, the second layer having a second etching rate higher than the first etching rate. A third layer includes a combination of the first and second layers between the first and the second layers, the third layer having a third etching rate lower than the second etching rate. An insulating layer has a second hole on the third layer, the insulating layer having a fourth etching rate higher than the first etching rate. A transparent conductive layer is on the third layer through the first and second holes.