The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2002

Filed:

Jul. 20, 1999
Applicant:
Inventors:

Kenji Orita, Osaka, JP;

Masahiro Isida, Osaka, JP;

Shinji Nakamura, Osaka, JP;

Masaaki Yuri, Osaka, JP;

Nobuyuki Uemura, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/180 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/180 ;
Abstract

A substrate containing a compound semiconductor layer comprises a substrate layer , a first semiconductor layer formed on the substrate layer , and a second semiconductor layer made of a Group III nitride-based compound semiconductor formed on the first semiconductor layer . The semiconductor layer is provided with a plurality of pores . Thus, a compound semiconductor layer containing a Group III nitride-based compound semiconductor with excellent surface planarity and crystallinity can be provided, as well as a method for manufacturing the same, and a semiconductor device using the same.


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