The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2002
Filed:
Jan. 04, 1999
Applicant:
Inventor:
Ritsuo Takizawa, Tokyo, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1322 ;
U.S. Cl.
CPC ...
H01L 2/1322 ;
Abstract
There is a provided a method of manufacturing a semiconductor substrate in which generation of bright points after epitaxial growth is reduced, and there is provided a method of manufacturing a solid-state image-pickup device in which illuminated defects are reduced. In fabrication of an epitaxial semiconductor substrate for a solid-state image-pickup device, an epitaxial layer is grown at a growth temperature of 1,120° C. or lower. Pre-annealing is preferably performed at a temperature of 900° C. or lower before hydrogen annealing.