The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2002

Filed:

Oct. 12, 1999
Applicant:
Inventors:

Mélanie Bartolomey, Paris, FR;

Jean-Marc Girard, Paris, FR;

Patrick Mauvais, Villepreux, FR;

James McAndrew, Lockport, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 2/111 ; G01N 2/131 ; G01N 2/135 ; G01N 2/139 ;
U.S. Cl.
CPC ...
G01N 2/111 ; G01N 2/131 ; G01N 2/135 ; G01N 2/139 ;
Abstract

Provided is a process for measuring the amount of impurities in a gas sample filling a laser absorption spectroscopy analysis cell. The process includes calculating the value of a characteristic representative of the absorbance of the gas sample, from a measurement of the gas sample at a single given pressure, and quantifying the impurities on the basis of a predetermined law for the variation of the characteristic as a function of the amount of impurities. The characteristic is the ratio of the difference between the luminous intensity (I ) of a light beam transmitted through the gas and the luminous intensity (I ) of the incident beam to the luminous intensity (I ) of the incident beam. The impurities are quantified on the basis of a value of the coefficient of proportionality between the amount of impurities and the characteristic, determined on the basis of a table of variation of the characteristic as a function of pressure, for a given amount of impurities.


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