The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2002
Filed:
May. 15, 2001
Hideaki Numata, Tokyo, JP;
Kouichi Takeda, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a magnetic random access memory circuit, the potential of all sense lines to are equalized, and the potential of all not-selected word lines are equalized and the selected word line is grounded so that a previously charged capacitor is discharged by a current path passing from the capacitor through a MOS transistor maintaining the potential of the sense line at a constant voltage lower than a break voltage, through the selected sense line , through the selected magneto-resistive element and through the selected word line . Thus, a voltage applied to the magneto-resistive element is maintained at a level smaller than a voltage breaking the magneto-resistive elements or a voltage remarkably deteriorating the characteristics of the magneto-resistive elements because of a biasing effect when the tunnel magneto-resistive element is used, and on the other hand, a high precise and high speed reading can be realized.