The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2002
Filed:
Jan. 06, 2000
Applicant:
Inventors:
Seungmoo Choi, Orlando, FL (US);
Sailesh M. Merchant, Orlando, FL (US);
Pradip K. Roy, Orlando, FL (US);
Assignee:
Agere Systems Guardian Corp., Orlando, FL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/300 ;
U.S. Cl.
CPC ...
H01L 3/300 ;
Abstract
A diffusion barrier for preventing the diffusion of oxygen from a high dielectric constant material to a titanium nitride layer. The diffusion barrier comprises one or more layers, wherein each of the one or more layers comprises a material selected from the group consisting of metal carbide, metal nitride, metal boride, metal carbo-nitride, and silicon carbide. The high dielectric constant material may be tantalum pentoxide or any perkovskite-type high dielectric constant material.