The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2002
Filed:
Mar. 27, 2000
Applicant:
Inventor:
Agisilaos Iliadis, Adelphi, MD (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/1062 ; H01L 2/715 ;
U.S. Cl.
CPC ...
H01L 3/1062 ; H01L 2/715 ;
Abstract
A light emitting field effect transistor is proposed with a new extended drain region. The extension is doped with erbium or other rare-earth atoms. The erbium provides light-emitting centers in the indirect bandgap silicon substrate to enhance the radiative process. When a drain voltage is applied to create a high enough electric, energetic electrons entering this region interact with Er to emit infrared light.
Quick Actions:
Iliadis, Agisilaos. (2002). Infra-red light emitting si-mosfet (U.S. Patent No. 6340826). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6340826
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile