The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2002
Filed:
Nov. 09, 2000
Kee Jeung Lee, Seoul, KR;
Kwang Chul Joo, Kyoungki-do, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungki-do, KR;
Abstract
Disclosed is a method for fabricating capacitors of a semiconductor device. This method includes A method for fabricating a capacitor of a semiconductor device, comprising the steps of forming a lower electrode on a semiconductor substrate formed with diverse structures required for a fabrication of a semiconductor device, depositing an amorphous TaON thin film over the lower electrode, and subjecting the deposited amorphous TaON thin film to a low-temperature thermal process and a high-temperature thermal process, thereby forming a TaON dielectric film, and forming an upper electrode on the TaON dielectric film. Since the TaON thin film is used as a dielectric film, it is possible to achieve an improvement in electrical characteristics while ensuring a capacitance required in the semiconductor device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile