The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2002
Filed:
Jul. 28, 2000
Kazuhiro Shimizu, Yokohama, JP;
Seiichi Aritome, Yokohama, JP;
Toshiharu Watanabe, Yokohama, JP;
Kazuhito Narita, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A nonvolatile semiconductor memory device comprises a semiconductor substrate, element isolating regions provided in the semiconductor substrate, first element regions, each of which is defined by two adjacent ones of the element isolating regions, and memory cell transistors formed in the element regions, wherein each of the memory cell transistors comprises a first gate insulating film formed on a corresponding one of the element isolating regions, a floating gate electrode formed on the gate insulating film, a second gate insulating film formed on the floating gate electrode, and a control electrode formed on the second gate insulating film and connected in common to a specific number of ones of the memory cell transistors to serve as a word line, and the floating gate includes a first conductive member with side faces in contact with side ends of the two adjacent ones of the element isolating regions and a second conductive member electrically connected to the first conductive member and formed so as to bridge a gap between the two adjacent ones of element isolating regions.