The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2002
Filed:
Apr. 10, 2000
Applicant:
Inventor:
Kazuhiro Inoue, Moriyama, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/528 ;
U.S. Cl.
CPC ...
H01L 3/528 ;
Abstract
A SiO layer is formed on a heat sink section having a cavity by thermal oxidation and an aluminum oxide layer is formed on the SiO layer by an electron beam evaporation process at a substrate temperature of 60° C. or less and at a deposition rate of 0.8 nm/s or less. The resulting aluminum oxide film is amorphous and has partial oxygen defects. The SiO layer and the aluminum oxide layer constitute a heat insulating thin-film. A thermoelectric conversion element and an infrared-absorbing layer are formed on the heat insulating thin-film to form an infrared sensor. The infrared sensor can be produced at low production costs and has high sensitivity.