The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 15, 2002

Filed:

Sep. 14, 1998
Applicant:
Inventor:

Toshiyuki Sameshima, Kokubunji, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/130 ;
U.S. Cl.
CPC ...
H01L 2/130 ;
Abstract

The invention provides a process of forming a semiconductor device, including the steps of: forming a separation member, used to form a separation layer, on a flat surface of a support substrate; forming support sections on the flat surface by removing portions of the separation member; forming, above the support sections, a film structure having a single layer or a plurality of layers; and separating the film structure from the Support substrate by removing the separation layer. The invention also provides a process of transferring a film structure having a single layer or a plurality of layers, including the steps of: forming a separation member used to form a separation layer on a flat surface of a first substrate; forming support sections on the flat surface by removing part of the separation member; forming, on the support sections, a film structure having a single layer or a plurality of layers; adhering a second substrate to the film structure; and separating the first substrate from the film structure by removing the separation layer.


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