The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2002
Filed:
Nov. 09, 2000
Kee Jeung Lee, Seoul, KR;
Dong Jun Kim, Kyoungki-do, KR;
Hyundai Electronics Industrial Co., Ltd., Kyoungki-do, KR;
Abstract
The present invention discloses a method of manufacturing a capacitor of high capacitance using a (Ta O ) (TiO ) thin film as dielectric layer. The method according to the present invention, comprising providing a semiconductor substrate over which selected lower patterns are formed and an intermediate insulating layer is covered; forming a lower electrode on the intermediate insulating layer; depositing a (Ta O ) —(TiO ) thin film in an amorphous state on the lower electrode; annealing the amorphous (Ta O ) —(TiO ) thin film at a low temperature; annealing the low temperature amorphous (Ta O ) —(TiO ) thin film at a high temperature to form a crystalline (Ta O ) —(TiO ) thin film as a dielectric layer; and forming an upper electrode on the (Ta O ) —(TiO ) thin film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile