The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2002
Filed:
Oct. 28, 1999
Nobuyuki Takenaka, Fukuyama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method of manufacturing a semiconductor memory device, which includes: a step of laminating and flattening a first interlayer insulating film on a semiconductor substrate provided with a semiconductor element having a diffusion region and then forming a contact hole in the first interlayer insulating film on the semiconductor element, a step of forming a contact plug by burying a contact plug material into the contact hole, a step of laminating a first electrode material forming a lower electrode for a capacitor so as to cover at least the contact plug and forming a lower electrode on the contact plug by patterning using a first mask, a step of forming a second interlayer insulating film so as to cover the lower electrode, and flattening the second interlayer insulating film until the surface of the second interlayer insulating film reaches a height identical with the surface of the lower electrode, a step of forming a ferroelectric material film and a second electrode material film forming an upper electrode for the capacitor in this order at least on the surface of the lower electrode, a step of forming an upper electrode by patterning the second electrode material using a second mask and a step of forming a ferroelectric film by patterning the ferroelectric material film using a third mask.