The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2002
Filed:
Feb. 26, 1998
Chang-Oh Jeong, Incheon-si, KR;
Yang-Sun Kim, Kyungki-do, KR;
Myung-Koo Hur, Kyungki-do, KR;
Young-Jae Tak, Kyungki-do, KR;
Mun-Pyo Hong, Kyungki-do, KR;
Chi-Woo Kim, Kyungki-do, KR;
Chun-Gi You, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
The Mo or MoW composition layer has the low resistivity less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy etchant or a Cr etchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor device along with an Al layer and a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using a polymer layer, an etch gas system CF +O can prevent the etch of the Mo or MoW alloy layer, and an etch gas SF +HCl(+He) or SF +Cl (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched by using the Mo or MoW layer as a mask, to use an etch gas system such as hydrogen halide and at least one selected from CF , CHF , CHClF , CH F and C F yield the good characteristics of TFT, and H plasma treatment can cause the characteristics of the TFT to be improved.