The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2002
Filed:
Apr. 20, 2000
Koji Tanizawa, Anan, JP;
Hiroki Narimatsu, Anan, JP;
Tomoaki Sakai, Anan, JP;
Tomotsugu Mitani, Anan, JP;
Nichia Corporation, Tokushima, JP;
Abstract
A nitride semiconductor device comprising an n-type nitride semiconductor layer, an active layer having a quantum well structure including a well layer of a nitride semiconductor containing In, the p-type nitride semiconductor layer having a p-type contact layer, a p-type high concentration doped layer interposed between said active layer and said p-type contact layer and a p-type multi-film layer interposed between said active layer and said p-type high concentration doped layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile