The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2002

Filed:

Jun. 30, 2000
Applicant:
Inventors:

Dong Su Park, Kyoungki-do, KR;

Tae Hyeok Lee, Kyoungki-do, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/1469 ;
Abstract

Disclosed herein is a method of forming a capacitor for a semiconductor memory device. The method comprises a step of:forming a lower electrode on the semiconductor substrate; forming an O -oxide film on the lower electrode; forming Si—O—N bonds on the surface of the O -oxide film; forming a TaON film on the Si—O—N bonds by a chemical vapor deposition of a Ta chemical vapor, an O gas and an NH gas; and forming an upper electrode on the TaON film.


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