The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2002

Filed:

Dec. 12, 2000
Applicant:
Inventors:

Ohsang Kwon, Austin, TX (US);

Hung Cai Ngo, Austin, TX (US);

Kevin John Nowka, Round Rock, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/00 ;
U.S. Cl.
CPC ...
G11C 8/00 ;
Abstract

A method and apparatus for selectable word line boosting in a memory device provides operating of the memory device over wide power supply ranges. A voltage reference and a comparator determine whether or not the power supply voltage has dropped below the range in which word line boosting is not required. If the power supply voltage has dropped, word line boosting is enabled, improving the noise margin and access time of the memory when operating at lower voltages.


Find Patent Forward Citations

Kwon, Ohsang. (2002). Method and apparatus for selectable wordline boosting in a memory device (U.S. Patent No. 6335900). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6335900

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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