The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2002

Filed:

Aug. 23, 2000
Applicant:
Inventors:

Hiromichi Hayase, Tokyo, JP;

Kotaro Takenaga, Tokyo, JP;

Takeshi Ishigami, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06G 7/12 ; G06G 7/26 ;
U.S. Cl.
CPC ...
G06G 7/12 ; G06G 7/26 ;
Abstract

A metal-oxide semiconductor field-effect transistor (MOSFET) amplifier circuit includes a compensation circuit with a low cost MOSFET and a constant current circuit providing a constant drain current of the MOSFET, which maintains an operational point of the amplifier at an optimal state at all times. The MOSFET amplifier circuit includes a first MOSFET, a constant current circuit including a variable resistor, an operational amplifier, a power supply and a resistor, a second MOSFET having a constant current generated by the constant current circuit as a drain current thereof, and a voltage control circuit including operational amplifiers and resistors for applying a gate source voltage of the second MOSFET to the first MOSFET as a gate-source voltage thereof.


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