The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2002
Filed:
Jul. 08, 1999
Applicant:
Inventor:
Paul Marshall Charles, Bramford, GB;
Assignee:
Hewlett-Packard Company, Palo Alto, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/348 ;
U.S. Cl.
CPC ...
H01L 2/348 ;
Abstract
The present invention relates to a method of etching a semiconductor wafer ( ), particularly of a compound semiconductor, in order to facilitate cleaving of devices ( ) from the wafer ( ) , and to devices ( ) cleaved by such a method. A semiconductor device ( ) is cleaved from a wafer ( ) and comprises a substrate ( ) and grown upon the substrate ( ) one or more layers ( ) , the cleaves ( ) thereby defining two pairs of parallel edges ( ) of the device ( ). Each of the cleaves is guided by a groove ( ) etched through the grown layers ( ) and partly into the substrate ( ).