The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2002
Filed:
Nov. 17, 1999
Isik C. Kizilyalli, Orlando, FL (US);
Sailesh M. Merchant, Orlando, FL (US);
Joseph R. Radosevich, Orlando, FL (US);
Agere Systems Guardian Corp., Orlando, FL (US);
Abstract
The present invention provides a semiconductor device having a metal oxide metal (MOM) capacitor formed over a semiconductor wafer. In one embodiment, the device is a MOM capacitor that includes a first metal layer formed over the semiconductor wafer, a metal silicide layer, such as a tungsten silicide, silicide nitride or a refractory metal silicide, located on the first metal layer and an oxide layer located on the metal silicide layer. The metal silicide layer, which in an advantageous embodiment may be tungsten silicide nitride, resists the corrosive effects of deglazing that may be conducted on other portions of the wafer and is substantially unaffected by the deglazing process, unlike titanium nitride (TiN). Additionally, the metal silicide can act as an etch stop for the etching process. The MOM capacitor is completed by a second metal layer that is located on the oxide layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile