The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2002
Filed:
Apr. 27, 2000
Atsushi Yoshinaga, Saitama, JP;
Toshiyuki Tanaka, Saitama, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
The invention provides an epitaxial wafer including a first p-type layer; a p-type cladding layer; a p-type active layer; an n-type cladding layer; and a second n-type layer stacked on a p-type GaAs single-crystal substrate, wherein Zn is employed as a dopant in the first p-type layer; Ge is employed as a dopant in the p-type cladding layer and the p-type active layer; Te is employed as a dopant in the n-type cladding later and the second n-type layer; the average carrier concentration of the n-type cladding layer and the second n-type layer is 8×10 cm to 2×10 cm ; the n-type cladding layer has a thickness of 60-80 &mgr;m; the second n-type layer has a total concentration of Zn and Ge of 1×10 atoms/cm or less; the dopant concentration of the portion in the second n-type layer within 3 &mgr;m of the interface between the n-type cladding layer and the second n-type layer is 3×10 cm or more; the Al compositional proportion in the n-type cladding layer or the second n-type layer is 0.10-0.35; the p-type active layer has a thickness of 0.5-1.2 &mgr;m; and the p-type active layer has an oxygen concentration of less than 3×10 atoms/cm . Epitaxial wafers for fabricating high-intensity and long-service-life GaAlAs infrared light-emitting devices are provided.