The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2002
Filed:
Mar. 23, 2000
Jonghoon Yi, Seoul, KR;
Sanggul Lee, Seoul, KR;
LG. Philips LCD Co., Ltd., Seoul, KR;
Abstract
The present invention discloses a polycrystalline silicon thin film transistor connected to a gate line and a data line, including a source electrode contacting the data line; a gate electrode contacting the gate line; a drain electrode spaced apart from the source electrode; a polysilicon layer having upper and lower surfaces, the lower surface having a contacting area and a noncontacting area, the polysilicon layer being positioned between and contacting the source and the drain electrodes, and acting as a channel in which electrons flow; and a buffer layer positioned under the polysilicon layer, the buffer layer having a supporting portion, the supporting portion supporting the lower surface of the polysilicon layer through the contact area of the lower surface of the polysilicon layer, thereby forming a space between the buffer layer and the noncontacting area of the lower surface of the polysilicon layer.