The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2002
Filed:
Mar. 01, 2000
Applicant:
Inventor:
Naoto Saito, Chiba, JP;
Assignee:
Seiko Instruments Inc., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1331 ;
U.S. Cl.
CPC ...
H01L 2/1331 ;
Abstract
There is provided a bipolar transistor integrated circuit device having excellent characteristics by a simple process. A region where an impurity is not introduced is disposed in a part of a buried layer region for separating a collector region from a substrate, so that a bipolar transistor having low collector resistance can be formed. This can be applied also to a BiCMOS where insulated field effect transistors exist on the same substrate. These processes can be realized without adding a number of steps to a conventional process.