The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2002
Filed:
Aug. 17, 1999
Applicant:
Inventors:
Jayendra D. Bhakta, Sunnyvale, CA (US);
Carl P. Babcock, Campbell, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ;
U.S. Cl.
CPC ...
H01L 2/18238 ;
Abstract
Isolation regions are formed with greater accuracy and consistency by forming an oxide-silicon nitride stack and then depositing an amorphous silicon antireflective layer, on the silicon nitride layer before patterning. Embodiments also include depositing the silicon nitride layer and the amorphous silicon layer in the same tool.
Bhakta, Jayendra. (2002). Simplified method of patterning field dielectric regions in a semiconductor device (U.S. Patent No. 6335235). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6335235
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile