The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2002
Filed:
Oct. 02, 1998
Mitsutaka Ohori, Gifu, JP;
Shiro Nakanishi, Ohgaki, JP;
Sanyo Electric Co., Ltd., , JP;
Abstract
On a transparent substrate where a gate electrode is formed, an amorphous silicon film is deposited by plasma CVD with a gate insulating film interposed therebetween. The silicon film is heated in an nitrogen atmosphere at 430±20° C. for an hour or longer to discharge hydrogen remaining in the film when it is formed. The silicon film is then melted by laser irradiation to crystallize, to thereby form a polycrystalline silicon film serving as an active region. Thus, when amorphous silicon is crystallized to form a polycrystalline silicon film, it is made possible to prevent creation of a rough film surface and penetration of impurity ions in the atmosphere into the polycrystalline silicon.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile