The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2002
Filed:
Mar. 14, 2000
Mitsuyo Asano, Yokohama, JP;
Shingo Kanamitsu, Fuchu, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A new method for repairing pattern defect on a photo mask is provided. The method includes the steps of: (a) determining the irradiation area of the focused ion beam (FIB) directed towards a defect, by narrowing the irradiation area by a predetermined distance inwardly from the edge of the defect; (b) focusing the FIB onto its irradiation area to remove a part of the pattern film material of the defect from its top surface and thus leave a thin layer on a mask substrate; and (c) removing the thin layer by using a laser beam. The defect may be an isolated pattern or a pattern extended continuously from an edge of the normal pattern. Further, the photo mask repaired by the method, and a manufacturing method of semiconductor devices employing the repaired photo mask are proposed. The photo mask may include a phase shift mask.