The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2001
Filed:
Mar. 03, 2000
Jae-yup Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A high-voltage tolerant interface circuit includes a terminal, first and second buffers, and a voltage controller. The first buffer includes MOS transistors having electrodes connected to the terminal, and converts and transfers the voltage level of an input signal to the terminal. The second buffer includes at least one MOS transistor having an electrode connected to the terminal, and converts a voltage level of a signal from the terminal. The voltage controller is connected to the terminal, and when a supply voltage is applied to the interface circuit, the voltage controller supplies the supply voltage to gates of the MOS transistors. When the supply voltage is not applied to the interface circuit and a voltage greater than the supply voltage is input to the terminal, the voltage controller pulls down the voltage and provides it to the gates of the MOS transistors.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile