The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2001
Filed:
Dec. 28, 1998
Applicant:
Inventor:
Yoshinori Okumura, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/980 ;
U.S. Cl.
CPC ...
H01L 2/980 ;
Abstract
A semiconductor device and manufacturing method are provided in which an increase in contact resistance between a plug and a semiconductor layer and an increase in junction leakage current in a semiconductor layer to which a plug is connected can be prevented and fabrication cost and device area can be reduced. A multi-layer film comprising a metal layer (,), a barrier metal layer (,), a polysilicon layer (,), and a barrier metal layer (,) is patterned by photolithography and etching to form poly-metal bit lines (,) electrically connected to buried layers (,A,,B) and polysilicon plugs (,).