The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2001
Filed:
Feb. 26, 1999
Applicant:
Inventors:
Hiroshi Ashida, Kawasaki, JP;
Miki Tomotani, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/994 ;
U.S. Cl.
CPC ...
H01L 2/994 ;
Abstract
The present invention relates to a method of manufacturing a semiconductor device including steps of fabricating a capacitor. In a semiconductor device having a capacitor, the capacitor includes a lower electrode, a dielectric oxide film formed on the lower electrode, and an upper electrode formed the dielectric oxide film and formed of at least platinum in which oxygen is contained at a concentration of more than 1×10,atoms/cm,. Accordingly, peeling of the upper electrode can be prevented and electric characteristics of the capacitor can be improved.