The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2001

Filed:

May. 31, 2001
Applicant:
Inventor:

Jae Kap Kim, Kyoungki-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract

A semiconductor device comprising a dual polysilicon gate structure in which the P type polysilicon gate is connected with the N type polysilicon gate by a bilayer conductive wiring structure without any contact, thereby significantly contributing to high integration, and a method for fabricating the semiconductor device such that the production yield is improved.


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