The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2001
Filed:
Sep. 29, 1998
Tomio Inoue, Kagoshima, JP;
Kenichi Sanada, Kagoshima, JP;
Kenichi Koya, Kagoshima, JP;
Yasuhiko Fukuda, Kagoshima, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A GaN-based LED element,having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element,formed in a silicon substrate. Electrical connections are provided via Au microbumps,and,between a p-side electrode,of the GaN-based LED element,and an n-side electrode,of the Si diode element,and between an n-side electrode,of the GaN-based LED element,and a p-side electrode,of the Si diode element,. The Si diode element,functions to protect the LED element,from an electrostatic destruction. The Si diode element,has a backside electrode,connected to a leadframe,. The p-side electrode,of the Si diode element,has a bonding pad portion,connected to a leadframe,via an Au wire