The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2001
Filed:
Mar. 05, 1999
Junko Izumitani, Tokyo, JP;
Kazuyoshi Maekawa, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Disclosed is an apparatus for manufacturing a semiconductor device including a metal film which is formed on a semiconductor substrate in a film formation region containing the interior of a hole formed in the semiconductor substrate. The apparatus includes a degassing chamber, a film forming chamber, and a cooing chamber. The degassing chamber,is provided for carrying out a degassing process by heating the semiconductor substrate to a degassing temperature. The film forming chamber,is provided for forming a metal film on the film formation region in a state in which the semiconductor substrate is heated to a film formation temperature. The cooling chamber,is provided for cooling, after completion of the degassing process and before beginning of the formation of the metal film, the semiconductor substrate to a cold temperature being lower than the film formation temperature and in a range of −50° C. to 150° C.