The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2001
Filed:
Mar. 23, 2000
Sony Corporation, , JP;
Abstract
A manufacturing method for forming a dual damascene structure in which the effective permittivity of an inter-layer insulating film is lowered without an etching mask for forming a contact hole, which is otherwise formed in the inter-layer insulating film. The manufacturing method comprises the step of forming an inorganic film to serve as an etching mask, on the inter-layer insulating film; the step of forming a first opening pattern for forming a wiring groove, in an upper part of the inorganic film; and the step of forming a second opening pattern for forming a contact hole, so as to coincide with the first opening pattern at least partially. Further, the contact hole is formed in the inter-layer insulating film by employing an etching mask made of the inorganic film, the inorganic film is etched into a state where only a third opening pattern obtained by transferring the first opening pattern is formed, and a wiring groove is formed in the inter-layer insulating film by employing the resulting inorganic film as the etching mask.