The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2001
Filed:
Aug. 16, 2000
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method of fabricating a gate of a semiconductor device, by which damage to a gate oxide layer is repaired, is provided. In an aspect of the method, a gate oxide layer is formed on a semiconductor substrate. A conductive layer containing silicon is formed on the gate oxide layer. A stacked structure with a polycrystalline silicon layer and a dichlorosilane-family tungsten silicide layer can be used as the conductive layer. A gate is formed by patterning the conductive layer. A silicon source layer which covers the sidewall of the gate is formed by selective epitaxial growth of silicon. The silicon source layer is grown to a thickness of about 200 Å or less. The silicon source layer is thermally treated at an oxidation atmosphere, thus repairing damage to the gate oxide layer.