The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2001
Filed:
Nov. 09, 2000
Koji Kishimoto, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method of fabricating a semiconductor device, includes the steps of (a) forming a first insulating film on a semiconductor substrate, (b) forming at least one recess at a surface of the first insulating film, (c) forming a first barrier layer covering a surface of the first insulating film and an inner surface of the recess therewith, (d) forming a copper layer over the first barrier layer such that the recess is entirely filled with the copper layer, (e) polishing the copper layer and the first barrier layer until the first insulating film appears, (f) exposing the copper layer to a plasma including at least one of carbon and hydrogen, (g) forming a second barrier layer on both the copper layer and the first insulating film, and (h) forming a second insulating film on the second barrier layer.